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| VCE IC = = 1700 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E170100 Doc. No. 5SYA1555-03 Oct 06 * Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2 Conditions VGE = 0 V, Tvj 25 C Tc = 80 C tp = 1 ms, Tc = 80 C min max 1700 2400 4800 Unit V A A V W A A A s V C C C C Nm -20 Tc = 25 C, per switch (IGBT) 20 14300 2400 4800 VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 1200 V, VCEM CHIP 1700 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 20000 10 4000 150 125 125 125 6 10 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 2400E170100 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 2400 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1700 2.0 2.3 typ max Unit V 2.3 2.6 2.6 2.9 12 120 V V mA mA nA V C VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 240 mA, VCE = VGE, Tvj = 25 C IC = 2400 A, VCE = 900 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 2400 A, RG = 0.56 , VGE = 15 V, L = 60 nH, inductive load VCC = 900 V, IC = 2400 A, RG = 0.56 , VGE = 15 V, L = 60 nH, inductive load VCC = 900 V, IC = 2400 A, VGE = 15 V, RG = 0.56 , L = 60 nH, inductive load VCC = 900 V, IC = 2400 A, VGE = 15 V, RG = 0.56 , L = 60 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C -500 4.5 22 228 22.1 9.6 320 320 270 275 1000 1090 250 265 495 500 6.5 nF ns ns ns ns Turn-on switching energy Eon mJ 700 850 mJ 1000 11100 10 A nH m Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) Eoff ISC L CE RCC'+EE' tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 1200 V, VCEM CHIP 1700 V TC = 25 C TC = 125 C 0.06 0.085 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 2 of 9 5SNA 2400E170100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol VF Irr Qrr trr Erec Conditions IF = 2400 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 900 V, IF = 2400 A, VGE = 15 V, RG = 0.56 L = 60 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min typ 1.65 1.7 1520 1880 590 1025 580 870 420 720 max 2.0 2.0 Unit V A C ns mJ Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 5) 6) Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties Parameter IGBT thermal resistance junction to case 7) Symbol Rth(j-c)IGBT Rth(j-c)DIODE 2) Conditions min typ max Unit 0.007 K/W 0.012 K/W 0.009 0.018 K/W K/W Diode thermal resistance junction to case IGBT thermal resistance case to heatsink Diode thermal resistance case to heatsink 2) Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 7) For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions Clearance distance in air Surface creepage distance Mass 7) 7) Symbol LxW da ds m x Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: min 23 19 33 32 typ max Unit mm mm mm H Typical , see outline drawing 190 x 140 x 38 1500 g Thermal and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 3 of 9 5SNA 2400E170100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 4 of 9 5SNA 2400E170100 4800 4400 4000 3600 3200 2800 IC [A] IC [A] 2400 2000 1600 1200 800 400 0 0 1 2 VCE [V] 3 4 5 VGE = 15 V 25 C 125 C 4800 4400 4000 3600 3200 2800 2400 2000 1600 1200 800 400 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] 25 C 125 C VCE = 25 V Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 4800 4400 4000 3600 3200 2800 IC [A] 2400 2000 1600 1200 800 400 0 0 1 2 3 VCE [V] 4 5 6 Tvj = 25 C 17V 15V 13V 11V 9V IC [A] 4800 4400 4000 3600 3200 2800 2400 2000 1600 1200 800 400 0 0 1 2 3 VCE [V] 4 5 6 Tvj = 125 C 17V 15V 13V 11V 9V Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 5 of 9 5SNA 2400E170100 3.0 VCC = 900 V RG = 0.56 ohm VGE = 15 V Tvj = 125 C L = 60 nH 3.0 VCC = 900 V IC = 2400 A VGE = 15 V Tvj = 125 C L = 60 nH Eon 2.5 2.5 2.0 Eon, Eoff [J] Eon, Eoff [J] 2.0 1.5 Eoff Eon 1.5 Eoff 1.0 1.0 0.5 E sw [mJ] = 1.38 x 10 -4 x I C 2 + 0.28 x I C + 233 0.5 0.0 0 1000 2000 IC [A] 3000 4000 5000 0.0 0 1 2 RG [ohm] 3 4 Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 VCC = 900 V RG = 0.56 ohm VGE = 15 V Tvj = 125 C L = 60 nH td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 10 VCC = 900 V IC = 2400 A VGE = 15 V Tvj = 125 C L = 60 nH td(off) 1 1 td(off) tr td(on) tf td(on) tf tr 0.1 0 1000 2000 IC [A] 3000 4000 5000 0.1 0 1 2 RG [ohm] 3 4 5 Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 6 of 9 5SNA 2400E170100 1000 20 VCC = 900 V Cies 100 15 VCC = 1300 V C [nF] Coes VGE [V] VGE = 0 V fOSC = 1 MHz VOSC = 50 mV 10 10 Cres 5 IC = 2400 A Tvj = 25 C 0 35 1 0 5 10 15 20 VCE [V] 25 30 0 2 4 6 8 10 12 Qg [C] 14 16 18 20 Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC 1200 V, Tvj = 125 C VGE = 15 V, RG = 0.56 ohm 2 1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 VCE [V] 1500 2000 Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 7 of 9 5SNA 2400E170100 1000 900 800 700 600 Erec [mJ] 500 Erec 400 300 200 100 E rec [mJ] = -4.53 x 10 -5 x I F 2 + 0.382 x I F + 76 2500 VCC = 900 V RG = 0.56 ohm Tvj = 125 C L = 60 nH Irr 1200 VCC = 900 V IF = 2400 A Tvj = 125 C L = 60 nH 2400 2000 1000 2000 Irr 1600 800 Erec [mJ], Qrr [C] 1500 Qrr 1000 Irr [A], Qrr [C] Qrr RG = 0.56 ohm 500 200 RG = 3.9 ohm Erec RG = 2.2 ohm 400 RG = 1.5 ohm RG = 1.0 ohm RG = 0.82 ohm 600 1200 800 400 0 0 1000 2000 3000 4000 IF [A] 0 5000 0 2 3 4 5 6 7 8 9 10 11 di/dt [kA/s] 0 Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 4800 4400 4000 3600 3200 2800 IF [A] 2400 2000 1600 1200 800 400 0 0 0.5 1 VF [V] 1.5 2 2.5 125C 25C 5200 4800 4400 4000 3600 3200 IR [A] 2800 2400 2000 1600 1200 800 400 0 0 500 1000 VR [V] 1500 2000 VCC 1200 V di/dt 12 kA/s Tvj = 125 C Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 8 of 9 Irr [A] 5SNA 2400E170100 0.1 Analytical function for transient thermal impedance: Zth(j-c) [K/W] IGBT, DIODE 0.01 Zth(j-c) Diode Z th (j-c) (t) = R i (1 - e -t/ i ) Zth(j-c) IGBT n i =1 2 i 0.001 IGBT 1 5.059 202.9 8.432 210 3 0.495 2.01 0.866 7.01 4 0.246 0.52 0.839 1.49 Ri(K/kW) i(ms) Ri(K/kW) i(ms) 1.201 20.3 1.928 29.6 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs time For detailed information refer to: * 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043-01 Load - cycle capability of HiPaks * 5SZK 9120-00 Specification of environmental class for HiPak (available upon request) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors DIODE Doc. No. 5SYA1555-03 Oct 06 |
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